Predictive device simulation for ESD protection structures validated with transient interferometric thermal-mapping experiments

Author

Reggiani, S. ; Gnani, E. ; Rudan, M. ; Baccarani, G. ; Bychikhin, S. ; Kuzmik, J. ; Pogany, D. ; Gornik, E. ; Denison, M. ; Jensen, N. ; Groos, G. ; Stecher, M.

Author_Institution

ARCES & DEIS, Bologna Univ., Italy

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

411

Lastpage

414

Abstract

Different protection diodes are investigated with electrothermal simulation and transient interferometric thermal-mapping experiments in a new complementary approach. The prediction capability of the simulation tool is validated up to the thermal failure of the p-n junction. The temperature distribution and its dynamics during the application of high-current pulses have been studied by comparing the calculated and experimental optical phase shifts: a quantitative agreement both in temporal evolution and thermal distribution is obtained up to temperatures of the order of 1000 K.

Keywords

electrostatic discharge; failure analysis; p-n junctions; semiconductor device models; semiconductor diodes; thermal analysis; ESD protection structures; electrothermal simulation; optical phase shifts; p-n junction; predictive device simulation; protection diodes; thermal distribution; thermal failure; transient interferometric thermal-mapping; Diodes; Electrostatic discharge; Electrostatic interference; Electrothermal effects; Optical interferometry; P-n junctions; Phase shifting interferometry; Predictive models; Protection; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European

Print_ISBN

0-7803-9203-5

Type

conf

DOI

10.1109/ESSDER.2005.1546672

Filename

1546672