DocumentCode
443938
Title
Influence of ballistic and pocket effects on electron mobility in Si MOSFETs
Author
Lusakowski, J. ; Knap, W. ; Meziani, Y. ; Cesso, J.-P. ; El Fatimy, A. ; Tauk, R. ; Dyakonova, N. ; Ghibaudo, G. ; Boeuf, F. ; Skotnicki, T.
Author_Institution
GES CNRS-UMR, Univ. Montpellier, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
561
Lastpage
564
Abstract
Room temperature magnetoresistance of nanometer bulk Si n-type MOSFETs was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 nm to 1000 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic motion and the pocket effect and that for the strong inversion the influence of both limitations on the mobility is comparable.
Keywords
MOSFET; electron mobility; elemental semiconductors; enhanced magnetoresistance; silicon; 30 to 1000 nm; MOSFET; Si; ballistic motion; electron magnetoresistance mobility; magnetic field; pocket effect; Ballistic magnetoresistance; Capacitance measurement; Electrical resistance measurement; Electron mobility; Length measurement; MOSFETs; Magnetic field measurement; Scattering; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN
0-7803-9203-5
Type
conf
DOI
10.1109/ESSDER.2005.1546710
Filename
1546710
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