DocumentCode
444116
Title
Phase critical-energy in second harmonic generation from thermally oxidized Si(001) interfaces
Author
An, Yong Qiang ; Cundiff, Steven T.
Author_Institution
JILA, Colorado Univ., Boulder, CO, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
280
Abstract
The rotational-anisotropy second-harmonic generation signal from thermally oxidized Si(001) surfaces shows unusual eightfold symmetry at a critical photon energy. This phase critical-energy varies monotonically with oxide thickness and provides a sensitive probe for interface conditions.
Keywords
elemental semiconductors; interface states; interface structure; optical harmonic generation; silicon; Si; critical photon energy; oxide thickness; phase critical-energy; rotational-anisotropy second-harmonic generation; thermally oxidized Si(001) surface; Anisotropic magnetoresistance; Azimuthal angle; Frequency conversion; Nonlinear optics; Optical harmonic generation; Oxidation; Polarization; Probes; Signal design; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548754
Filename
1548754
Link To Document