Title :
Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots
Author :
Ebbens, A. ; Krizhanovskii, D.N. ; Tartakovskii, A.I. ; Pulizzi, F. ; Saveliev, A.V. ; Wright, T. ; Skolnick, M.S. ; Hopkinson, M.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Abstract :
Control of electronic spins in individual InGaAs quantum dots is achieved by applying vertical electric and magnetic fields. In addition, dots with anomalously large degree of linear polarization are found weakly affected by magnetic field.
Keywords :
III-V semiconductors; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot; anomalous polarization property; electronic spin control; linear polarization; photoluminescence spectra; spin-memory; vertical electric feild; vertical magnetic field; Excitons; Gallium arsenide; Indium gallium arsenide; Magnetic fields; Magnetic properties; Optical polarization; Photoluminescence; Quantum computing; Quantum dots; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548767
