DocumentCode
444132
Title
Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm
Author
Kako, S. ; Hoshino, K. ; Ishida, S. ; Arakawa, Y. ; Santori, C. ; Götzinger, S. ; Yamamoto, Y.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
326
Abstract
We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon antibunching is observed, demonstrating single-photon source operating at a record-short wavelength of 357 nm.
Keywords
III-V semiconductors; gallium compounds; photoluminescence; photon antibunching; semiconductor quantum dots; 357 nm; GaN; photon antibunching; second-order coherence function; single GaN quantum dot; single photon emission; Adaptive optics; Coherence; Gallium nitride; III-V semiconductor materials; Optical buffering; Optical distortion; Optical receivers; Optical transmitters; Quantum dots; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548770
Filename
1548770
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