DocumentCode
444157
Title
Photonic crystal quantum-dot laser with ultra-low threshold
Author
Strauf, S. ; Hennessy, K. ; Rakher, M.T. ; Badolato, A. ; Petroff, P.M. ; Hu, E.L. ; Bouwmeester, D.
Author_Institution
Dept. of Phys., California Univ., Santa Barbara, CA, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
404
Abstract
We have fabricated L3-type photonic crystal microcavities with embedded InAs/GaAs quantum dots as active material. Single mode lasing has been found for devices emitting between 910-975 nm showing ultra-low lasing thresholds down to 160 nanoWatt.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser modes; microcavities; photonic crystals; quantum dot lasers; semiconductor quantum dots; 160 nW; 910 to 975 nm; InAs-GaAs; L3-type photonic crystal microcavities fabrication; active material; embedded InAs-GaAs quantum dots; photonic crystal quantum-dot laser; single mode lasing; ultra-low lasing threshold; Crystalline materials; Gallium arsenide; Microcavities; Optical materials; Photonic crystals; Q factor; Quantum dot lasers; Quantum dots; Semiconductor materials; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548796
Filename
1548796
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