Title :
Ultrafast electronic dynamics in unipolar n-doped InAs/GaAs quantum dot structures
Author :
Wu, Z.-K. ; Choi, H. ; Norris, T.B. ; Stiff-Roberts, A. ; Bhattacharya, P.
Author_Institution :
Center for Ultrafact Opt. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Time-resolved mid-infrared-pump, optical-probe differential transmission spectroscopy on n-doped quantum dots directly reveals electron dynamics relevant to unipolar devices. Capture times into excited and ground states are found to be 7.1 and 116 ps.
Keywords :
III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; photoluminescence; semiconductor doping; semiconductor quantum dots; time resolved spectra; 116 ps; 7.1 ps; InAs-GaAs; capture times; excited states; ground states; optical-probe differential transmission spectroscopy; photoluminescence; time-resolved mid-infrared-pump probe spectroscopy; ultrafast electronic dynamics; unipolar n-doped InAs-GaAs quantum dot structures; Electron optics; Gallium arsenide; Optical pulse generation; Optical pumping; Optical scattering; Phonons; Pulse amplifiers; Quantum dots; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548849
