DocumentCode
444221
Title
Single color injection of ballistic spin-polarized currents in strained [110]-oriented GaAs quantum wells
Author
Bieler, M. ; Laman, N. ; van Driel, H.M. ; Smirl, Arthur L.
Author_Institution
Dept. of Phys., Toronto Univ., Ont., Canada
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
595
Abstract
Spin-polarized ballistic charge currents are generated in strained GaAs with single 60 fs optical pulses and detected via THz experiments. State filling and carrier-dependent momentum scattering lead to a sublinear intensity dependence at high pump intensities.
Keywords
III-V semiconductors; ballistic transport; gallium arsenide; semiconductor quantum wells; spin polarised transport; submillimetre waves; 60 fs; GaAs; THz radiation; carrier-dependent momentum scattering; single color injection; spin-polarized ballistic charge currents; state filling; strained GaAs quantum wells; Capacitive sensors; Gallium arsenide; Laser excitation; Nonlinear optics; Optical polarization; Optical pulse generation; Optical pulses; Optical scattering; Probes; Pulse measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548865
Filename
1548865
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