DocumentCode :
444255
Title :
THz spectroscopy of excitons in bulk GaAs and in AlGaAs/GaAs quantum wells
Author :
Mitrofanov, Oleg ; Rapaport, Ronen ; Pfeiffer, Loren N. ; West, Ken W.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
696
Abstract :
Distinctive excitonic spectral signature in Terahertz region provides an excellent method to probe the exciton population in semiconductors. We present the study of exciton formation and dynamics in GaAs bulk and quantum well systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum wells; submillimetre wave spectra; time resolved spectra; AlGaAs-GaAs; AlGaAs-GaAs quantum wells; GaAs; THz spectroscopy; bulk GaAs; exciton dynamics; exciton formation; excitonic spectral signature; Absorption; Charge carrier processes; Excitons; Frequency; Gallium arsenide; Optical imaging; Optical pumping; Plasma temperature; Resonance; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
Type :
conf
DOI :
10.1109/QELS.2005.1548906
Filename :
1548906
Link To Document :
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