Title :
Coherent phonons in a semiconductor superlattice studied by femtosecond X-ray diffraction
Author :
Bargheer, M. ; Zhavoronkov, N. ; Gritsai, Y. ; Woo, J.C. ; Kim, D.S. ; Woerner, M. ; Elsaesser, T.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Optik und Kurzzeitspektroskopie, Berlin, Germany
Abstract :
For the first time femtosecond X-ray diffraction measures the coherent strain connected to a zone-folded longitudinal acoustic phonon optically excited in a GaAs/AlGaAs superlattice, giving direct evidence for the displacive excitation mechanism.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; gallium compounds; high-speed optical techniques; phonons; semiconductor superlattices; GaAs-AlGaAs; acoustic phonon; coherent phonons; coherent strain measurement; displacive excitation mechanism; femtosecond X-ray diffraction; semiconductor superlattice; Acoustic diffraction; Acoustic measurements; Displacement measurement; Optical diffraction; Phonons; Semiconductor superlattices; Strain measurement; Time measurement; Ultrafast optics; X-ray diffraction;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548924
