DocumentCode :
444320
Title :
Femtosecond laser ablation of silicon (100) with thermal oxide thin films of varying thickness
Author :
McDonald, Joel P. ; Ray, Katherine E. ; Mistry, Vanita R. ; Mourou, Gérard ; Yalisove, Steven M.
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
910
Abstract :
Femtosecond laser ablation of silicon (100) with thermal oxide thin films was studied in order to further understand the ablative properties of thin films and to evaluate their influence on the ablation of the substrate.
Keywords :
high-speed optical techniques; laser ablation; semiconductor thin films; silicon compounds; Si-SiO2; amorphous material; femtosecond laser ablation; glass; silicon; thermal oxide thin film; Laser ablation; Laser beams; Laser theory; Optical films; Optical pulses; Semiconductor thin films; Silicon; Surface emitting lasers; Surface morphology; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
Type :
conf
DOI :
10.1109/QELS.2005.1548979
Filename :
1548979
Link To Document :
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