Title :
InGaN/GaN MQW laser diodes with 4th order FIB-etched gratings
Author :
Sanz, D. Cortaberria ; Rorison, JM ; Yu, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bristol Univ., UK
Abstract :
Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4th order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.
Keywords :
III-V semiconductors; diffraction gratings; focused ion beam technology; gallium compounds; indium compounds; laser beams; optical pumping; quantum well lasers; semiconductor quantum wells; sputter etching; 4th order FIB-etched gratings; 4th order surface gratings; InGaN-GaN; MQW laser diodes; electrically pumped laser; focused ion beam etching; spatially coherent vertical emission; vertical output power; Diode lasers; Gallium nitride; Gratings; Ion beams; Laser excitation; Power lasers; Pump lasers; Quantum well devices; Spatial coherence; Vertical cavity surface emitting lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549017
