• DocumentCode
    444357
  • Title

    Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5 μm range

  • Author

    Schlichenmaier, C. ; Thranhardt ; Meier, T. ; Grüning, H. ; Klar, P.J. ; Heimbrodt, W. ; Koch, S.W. ; Chow, W.W. ; Hader, J. ; Moloney, J.V.

  • Author_Institution
    Dept. of Phys. & Mater. Sci. Center, Philipps-Univ., Marburg, Germany
  • Volume
    2
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1053
  • Abstract
    Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 μm range.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; optical materials; semiconductor lasers; 1.3 to 1.5 micron; A type I transition; A type II transition; InGaAs-GaNAs; dilute nitride heterostructures; dilute nitride semiconductor laser gain material; optical properties; semiconductor heterostructures; Absorption; Equations; Gallium arsenide; Laser modes; Laser theory; Optical materials; Optical pumping; Optical scattering; Semiconductor lasers; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2005. QELS '05
  • Print_ISBN
    1-55752-796-2
  • Type

    conf

  • DOI
    10.1109/QELS.2005.1549027
  • Filename
    1549027
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=444357