DocumentCode
444361
Title
Optical spin injection from a ZnMnSe spin aligner into GaAs/AlGaAs quantum wells
Author
Tröndle, D. ; Löffler, W. ; Passow, Th. ; Daniel, B. ; Grun, M. ; Hetterich, M. ; Klingshirn, C. ; Kalt, H.
Author_Institution
Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1064
Abstract
Spin-polarized excitons are optically created in a diluted magnetic semiconductor layer and transferred to a non-magnetic GaAs/AlGaAs quantum well. The photoluminescence intensity is measured polarization resolved and gives clear evidence for efficient spin injection.
Keywords
III-V semiconductors; aluminium compounds; excitons; gallium compounds; magnetic semiconductors; magneto-optical effects; manganese compounds; photoluminescence; semiconductor quantum wells; spin polarised transport; zinc compounds; GaAs-AlGaAs; ZnMnSe; diluted magnetic semiconductor layer; nonmagnetic semiconductor quantum well; optical polarisation; optical spin injection; photoluminescence intensity; spin-polarized excitons; Excitons; Gallium arsenide; Lattices; Magnetic semiconductors; Molecular beam epitaxial growth; Optical buffering; Optical polarization; Photoluminescence; Spin polarized transport; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549031
Filename
1549031
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