DocumentCode
444414
Title
SEM and SPM studies of single-shot damage on silicon
Author
Liu, Hsiao-Hua ; Mourou, Gerard ; McDonald, Joel P. ; Picard, Yoosuf N. ; Yalisove, Steven M. ; Juhasz, Tibor
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1221
Abstract
Scanning probe microscopy was used to study femtosecond laser ablation of silicon as a function of laser wavelength, doping concentration, and sample temperature to gain a greater understanding of the femtosecond laser damage mechanism.
Keywords
high-speed optical techniques; laser ablation; scanning electron microscopy; scanning probe microscopy; semiconductor doping; silicon; SEM; SPM; Si; doping concentration; femtosecond laser ablation; scanning probe microscopy; silicon; single-shot damage; Laser ablation; Optical filters; Optical pulses; Optical pumping; Scanning electron microscopy; Scanning probe microscopy; Semiconductor lasers; Silicon; Temperature; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549085
Filename
1549085
Link To Document