Title :
SEM and SPM studies of single-shot damage on silicon
Author :
Liu, Hsiao-Hua ; Mourou, Gerard ; McDonald, Joel P. ; Picard, Yoosuf N. ; Yalisove, Steven M. ; Juhasz, Tibor
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Scanning probe microscopy was used to study femtosecond laser ablation of silicon as a function of laser wavelength, doping concentration, and sample temperature to gain a greater understanding of the femtosecond laser damage mechanism.
Keywords :
high-speed optical techniques; laser ablation; scanning electron microscopy; scanning probe microscopy; semiconductor doping; silicon; SEM; SPM; Si; doping concentration; femtosecond laser ablation; scanning probe microscopy; silicon; single-shot damage; Laser ablation; Optical filters; Optical pulses; Optical pumping; Scanning electron microscopy; Scanning probe microscopy; Semiconductor lasers; Silicon; Temperature; Ultrafast optics;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549085
