DocumentCode
444429
Title
Extraction efficiency enhancement in GaN-based light emitters grown on a holographically nano-patterned sapphire substrate
Author
Dong-Ho Kim ; Cho, Jaehee ; Jaehoon Kim ; Jeon, Heonsu ; Sakong, Tan ; Jaehee Cho ; Park, YongJo
Author_Institution
Sch. of Phys., Seoul Nat. Univ., South Korea
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1268
Abstract
We observed over two-fold enhancement in light extraction efficiency from GaN-based light emitters grown on a nano-patterned sapphire substrate. Nano-hole array patterns were generated by laser holography, which enabled a large area process with high throughput.
Keywords
III-V semiconductors; gallium compounds; holography; light emitting diodes; nanopatterning; nanostructured materials; photoluminescence; sapphire; wide band gap semiconductors; Al2O3; GaN-based light emitters; holographically nanopatterned sapphire substrate; laser holography; light extraction efficiency enhancement; nanohole array pattern generation; photoluminescence; two-fold enhancement; Gallium nitride; Gratings; Holographic optical components; Holography; Light emitting diodes; Optical arrays; Optical buffering; Optical scattering; Semiconductor laser arrays; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549101
Filename
1549101
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