External EMI effects on a CMOS circuit in a cavity with an aperture

Author

Kollman, Ronald D. ; Yang, H. Y. David

Author_Institution

Haynes-Bent EM Consulting, Geneva, IL, USA

Volume

3A

fYear

2005

fDate

3-8 July 2005

Firstpage

312

Abstract

This paper explores the disruption of a simple CMOS circuit in a rectangular cavity with a rectangular aperture. The CMOS circuit is fed by a microstrip line on the back face of the cavity opposite to the aperture. A cavity transfer function is determined that relates the E-field strength at the face of the cavity to a voltage at the input to the first gate of a 4-bit full adder circuit. Various waveshapes are analyzed using the cavity transfer function to get a modified wave at the input to the circuit and then determine the relative bit error rates of the various interference waveforms.

Keywords

CMOS integrated circuits; adders; electromagnetic fields; electromagnetic interference; error statistics; microstrip lines; transfer functions; 4 bit; 4-bit full adder circuit; CMOS circuit; E-field strength; cavity transfer function; external EMI effects; interference waveforms; microstrip line feed; rectangular aperture; rectangular cavity; relative bit error rates; Adders; Apertures; Circuit simulation; Coupling circuits; Electromagnetic interference; Frequency; Microstrip; Resonance; Transfer functions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 2005 IEEE

Print_ISBN

0-7803-8883-6

Type

conf

DOI

10.1109/APS.2005.1552244

Filename

1552244