Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications

Author

Cha, Ho-Young ; Chen, Xiaodong ; Schaff, William J. ; Spencer, Michael G. ; Eastman, Lester F. ; Ridley, Brian K. ; Pomeroy, James ; Kuball, M.

Author_Institution

Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

55

Lastpage

56

Abstract

In order to achieve operation at terahertz frequency, electronic devices are required to reach the highest possible transit velocity, even if this velocity is limited to a short distance. The concept of ballistic electrons in compound semiconductors was initially reported using GaAs (Shur and Eastman, 1979). In this work, progress in initial research on GaN based ballistic electron acceleration negative-differential-conductivity (BEAN) diodes for potential THz oscillator is reported along with their device concepts

Keywords

III-V semiconductors; gallium arsenide; submillimetre wave diodes; submillimetre wave oscillators; BEAN diodes; GaAs; GaN; THz oscillator; ballistic electron acceleration negative-differential-conductivity diodes; compound semiconductors; electronic devices; terahertz frequency; Acceleration; Current density; Effective mass; Electrons; Gallium nitride; III-V semiconductor materials; Performance evaluation; Semiconductor diodes; Temperature; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553052

Filename

1553052