Title :
Interface and gate line edge roughness effects on intra die variance in mos device characteristics
Author :
Gunther, Norman ; Hamadeh, E. ; Niemann, Darrell ; Rahman, Mahmud
Keywords :
Capacitance; Circuits; Electron devices; Fabrication; Fluctuations; MOS devices; Open systems; Predictive models; Strontium; Threshold voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553066
