Improved reliability characteristics of ultrathin high-k MOSFET with TiN gate by employing two step post deposition annealing process

Author

Rahman, M.S. ; Park, H. ; Chang, M. ; Choi, R. ; Lee, B.H. ; Lee, Jack C. ; Hwang, H.

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

85

Lastpage

86

Abstract

Hafnium and hafnium based oxide materials seems most promising gate material for aggressively scaled device. However, the mobility degradation of Hf-base gate dielectric is one of the most difficult problems. Recently, we have reported a significant improvement in interface characteristics, device drive current and maximum transconductance (G_m) by employing high pressure (HP) deuterium annealing at relatively low temperature. However reliability characteristics are not much improved compared with forming gas annealed sample. This might be due to the presence of excess deuterium in the oxide. In this presentation, we report the effect of two step anneal process and its effect on reliability and performance

Keywords

MOSFET; annealing; high-k dielectric thin films; semiconductor device reliability; titanium compounds; Hf-base gate dielectric; TiN; TiN gate; device drive current; high pressure deuterium annealing; interface characteristics; maximum transconductance; mobility degradation; two step post deposition annealing process; ultrathin high-k MOSFET; Annealing; Degradation; Deuterium; Dielectric materials; Hafnium; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Tin; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553067

Filename

1553067