DocumentCode
445338
Title
Simulation of hole transport in p-channel Si MOSFETs
Author
Krishinan, S. ; Vasileska, Dragica ; Fischetti, Massimo V.
Volume
1
fYear
2005
fDate
June 20-22, 2005
Firstpage
91
Lastpage
92
Keywords
Anisotropic magnetoresistance; Charge carrier processes; Computational modeling; Effective mass; Electron devices; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Particle scattering; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553070
Filename
1553070
Link To Document