DocumentCode
445363
Title
High power AlGaN/GaN HEMTs for wireless base station application
Author
Joshin, K. ; Kikkawa, T.
Volume
1
fYear
2005
fDate
June 20-22, 2005
Firstpage
173
Lastpage
176
Keywords
Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Multiaccess communication; Pulse measurements; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553108
Filename
1553108
Link To Document