AlGaN/GaN HEMTs with an InGaN-based back-barrier

Author

Palacios, T. ; Chakraborty, A. ; Keller, S. ; DenBaars, S.P. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

181

Lastpage

182

Abstract

In this work, we use an ultra-thin InGaN layer below the GaN channel to increase the confinement of the electrons. In this novel approach, the polarization induced electric field in the InGaN layer is used to raise the conduction band energy in the buffer layer with respect to the channel. With this technique, a double-heterojunction transistor can be formed without the need of a high bandgap or p-doped buffer. Poisson-Schrodinger simulations (Wu, et.al.) have confirmed the increased electron confinement at electron temperatures as high as 3000 K

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; InGaN; Poisson Schrodinger simulations; back barrier; buffer layer; conduction band energy; double heterojunction transistor; electron confinement; electron temperatures; polarization induced electric field; Aluminum gallium nitride; Degradation; Electrons; Gallium nitride; HEMTs; High performance computing; Linearity; MODFETs; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553111

Filename

1553111