• DocumentCode
    445367
  • Title

    Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/

  • Author

    Boutros, K.S. ; Luo, W.B. ; Shinohara, K.

  • Author_Institution
    Rockwell Sci. Co., Thousand Oaks, CA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    183
  • Lastpage
    184
  • Abstract
    In this work, we report on vertically scaled, 100nm gate-length Al 0.31Ga0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an fT of 125 GHz and an f max (Ug) of 174 GHz. Careful device design and unique process features also resulted in a high peak Gm,ext of 498 mS/mm, an Idss of 1.2A/mm, and a gate-to-drain breakdown of 30V
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; 100 nm; 125 GHz; 174 GHz; 30 V; AlGaN-GaN; HEMT; T-Gate; gate to drain breakdown; vertically scaled; Aluminum gallium nitride; Contracts; Cutoff frequency; Delay effects; Fabrication; Frequency response; Gallium nitride; HEMTs; MODFETs; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553112
  • Filename
    1553112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445367