DocumentCode
445368
Title
High-performance silicon-germanium technology
Author
Subbanna, Seshadri ; Freeman, Greg ; Koester, Steven ; Rim, Ken ; Joseph, Alvin ; Harame, David
Author_Institution
IBM Syst. & Technol. Group, Hopewell Junction, NY
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
195
Lastpage
196
Abstract
This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a "mature" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator
Keywords
Ge-Si alloys; semiconductor technology; high performance silicon based semiconductor technology; silicon germanium technology; CMOS process; CMOS technology; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Lithography; MODFETs; Microwave devices; Microwave frequencies; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553117
Filename
1553117
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