Title :
High-performance silicon-germanium technology
Author :
Subbanna, Seshadri ; Freeman, Greg ; Koester, Steven ; Rim, Ken ; Joseph, Alvin ; Harame, David
Author_Institution :
IBM Syst. & Technol. Group, Hopewell Junction, NY
Abstract :
This paper will focus on the various and ubiquitous uses of silicon-germanium (SiGe) in high-performance silicon-based semiconductor technology. SiGe can now qualify as a "mature" technology - it is almost 20 years since the first SiGe HBT work. It is 10 years since the qualification of SiGe as a manufacturable silicon technology in a high-volume silicon fabricator
Keywords :
Ge-Si alloys; semiconductor technology; high performance silicon based semiconductor technology; silicon germanium technology; CMOS process; CMOS technology; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; Lithography; MODFETs; Microwave devices; Microwave frequencies; Silicon germanium;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553117
