Structural optimization and electrical characteristics of ultra-thin gadolinium (Gd/sub 2/O/sub 3/) incorporated HfO/sub 2/ n-MOSFETs

Author

Rhee, Se Jong ; Kim, Hyoung-Sub ; Kang, Chang Yong ; Choi, Chang Hwan ; Akbar, M.S. ; Zhang, Manhong ; Lee, Tackwhi ; Ok, Injo ; Zhu, Feng ; Krishnan, Siddarth A. ; Lee, Jack C.

Author_Institution

Microelectron. Res. Center, Texas Univ.

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

219

Lastpage

220

Abstract

New structural approach of Gd₂O₃ incorporated HfO₂ multi-metal dielectric n-MOSFETs and their electrical characteristics are investigated for the first time. Among three possible dielectric structures, top Gd₂O₃ with bottom HfO₂ bi-layer dielectric shows the best EOT and leakage current characteristics. Scaling-down of this Gd₂O ₃/HfO₂ dielectric result in ultra-thin regime of EOT (between 5Aring and 10Aring) with substantial reduction in leakage current compared to HfO₂. Also promising MOSFET characteristics with improved output current, transconductance, and channel electron mobility for Gd₂O₃/HfO₂ are observed

Keywords

MOSFET; dielectric materials; gadolinium compounds; hafnium compounds; high-k dielectric thin films; leakage currents; Gd₂O₃-HfO₂; MOSFET; bilayer dielectric; channel electron mobility; gadolinium; leakage current; output current; transconductance; Conducting materials; Electric variables; Electron mobility; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFET circuits; Thermal stability; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553128

Filename

1553128