Title :
Higher k HfTaTiO gate dielectric with improved material and electrical characteristics
Author :
Lu, N. ; Li, H.J. ; Gardner, M. ; Kwong, D.L.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX
Abstract :
Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved Vth instability than HfO2. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics
Keywords :
hafnium compounds; high-k dielectric thin films; permittivity; tantalum compounds; titanium compounds; 900 C; HfTaTiO; SILC; barrier height; breakdown characteristics; crystallization temperature; dielectric constant; electrical characteristics; gate dielectric; hysteresis; material characteristics; ultra-thin EOT; Annealing; Bonding; CMOS technology; Crystallization; Dielectric constant; Dielectric materials; Electric variables; Hafnium oxide; Temperature; Thermal degradation;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553129
