DocumentCode
445750
Title
New effects in gallium arsenide implanted with ions and subjected to radiation annealing
Author
Ardyshev, M.V.
Author_Institution
Siberian Physicotech. Inst., Tomsk, Russia
Volume
2
fYear
2004
fDate
26 June-3 July 2004
Firstpage
184
Abstract
The electrophysical methods and RBS technique were used to study the behavior of impurities and defects in implanted gallium arsenide after rapid thermal, low- and high-energy electron-beam annealings.
Keywords
III-V semiconductors; Rutherford backscattering; crystal defects; electron beam annealing; electron beam effects; gallium arsenide; impurities; ion implantation; rapid thermal annealing; semiconductor doping; GaAs:Cd; GaAs:S; GaAs:Si; RBS; defects; electrophysical methods; high-energy electron-beam annealing; impurities; ion-implanted gallium arsenide; low-energy electron-beam annealing; radiation annealing; rapid thermal annealing; Atomic measurements; Electron mobility; Gallium arsenide; Impurities; Ionization; Ionizing radiation; Plasma temperature; Rapid thermal annealing; Semiconductor films; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on
Print_ISBN
0-7803-8383-4
Type
conf
DOI
10.1109/KORUS.2004.1555586
Filename
1555586
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