• DocumentCode
    445938
  • Title

    Retrieval property of associative memory with negative resistance

  • Author

    Hayakawa, Yoshihiro ; Li, Hongge ; Nakajima, Koji

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
  • Volume
    2
  • fYear
    2005
  • fDate
    31 July-4 Aug. 2005
  • Firstpage
    1187
  • Abstract
    The self-connection can enlarge the memory capacity of an associative memory based on the neural network, however, the basin size of the embedded memory state shrinks. The problem of basin size is related to undesirable stable states which are spurious states. If we can destabilize these spurious states, we expect to improve the basin size. The inverse function delayed (ID) model which includes the BVP model has the negative resistance on its dynamics. The negative resistance of the ID model can destabilize the equilibrium states on some regions of conventional neural network. Hence, the associative memory based on the ID model has possibilities of improving the basin size of the network which has the self-connection in order to enlarge a memory capacity. In this paper, we show the improvement of performance compared with the conventional neural network by computer simulation.
  • Keywords
    content-addressable storage; neural nets; associative memory; basin size; inverse function delayed model; negative resistance; neural network; retrieval property; spurious states; Associative memory; Biological system modeling; Computer simulation; Delay; Electric resistance; Electronic mail; Hysteresis; Immune system; Neural networks; Power system modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Neural Networks, 2005. IJCNN '05. Proceedings. 2005 IEEE International Joint Conference on
  • Print_ISBN
    0-7803-9048-2
  • Type

    conf

  • DOI
    10.1109/IJCNN.2005.1556022
  • Filename
    1556022