DocumentCode
445938
Title
Retrieval property of associative memory with negative resistance
Author
Hayakawa, Yoshihiro ; Li, Hongge ; Nakajima, Koji
Author_Institution
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Volume
2
fYear
2005
fDate
31 July-4 Aug. 2005
Firstpage
1187
Abstract
The self-connection can enlarge the memory capacity of an associative memory based on the neural network, however, the basin size of the embedded memory state shrinks. The problem of basin size is related to undesirable stable states which are spurious states. If we can destabilize these spurious states, we expect to improve the basin size. The inverse function delayed (ID) model which includes the BVP model has the negative resistance on its dynamics. The negative resistance of the ID model can destabilize the equilibrium states on some regions of conventional neural network. Hence, the associative memory based on the ID model has possibilities of improving the basin size of the network which has the self-connection in order to enlarge a memory capacity. In this paper, we show the improvement of performance compared with the conventional neural network by computer simulation.
Keywords
content-addressable storage; neural nets; associative memory; basin size; inverse function delayed model; negative resistance; neural network; retrieval property; spurious states; Associative memory; Biological system modeling; Computer simulation; Delay; Electric resistance; Electronic mail; Hysteresis; Immune system; Neural networks; Power system modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Neural Networks, 2005. IJCNN '05. Proceedings. 2005 IEEE International Joint Conference on
Print_ISBN
0-7803-9048-2
Type
conf
DOI
10.1109/IJCNN.2005.1556022
Filename
1556022
Link To Document