DocumentCode
446545
Title
Analysis of the sensitivity of a monolithic optical phase-shift detector to geometrical parameter variations
Author
Valentin, J. ; Arguel, P. ; Bouchard, O. ; Lozes-Dupuy, F. ; Bonnefont, S.
Author_Institution
LAAS-CNRS, Toulouse, France
Volume
1
fYear
2005
fDate
3-5 Oct. 2005
Firstpage
129
Abstract
Modelling of a novel monolithic optical phase-shift detector is presented. The device consists of a diffraction grating etched at the surface of a p-n photodiode on silicon. The photodiode generates a current depending on the relative phase between two incident beams collimated toward the diffraction grating. It is shown that the photocurrent contrast, given by the whole range of the phase variation, can be optimised by a precise determination of the period, depth and filling factor of the grating. Detailed analysis of the device performance for TE and TM polarization shows its high sensitivity to the above geometrical parameter variations.
Keywords
diffraction gratings; elemental semiconductors; integrated optoelectronics; light polarisation; monolithic integrated circuits; optical sensors; photoconductivity; photodetectors; photodiodes; semiconductor device models; silicon; TE polarization; TM polarization; collimated beams; diffraction grating; etching; geometrical parameter variations; monolithic optical detector; optical phase-shift detector; p-n photodiode; phase variation; photocurrent contrast; photodiode-on-silicon; sensitivity analysis; Diffraction gratings; Etching; Geometrical optics; Optical collimators; Optical detectors; Optical diffraction; Optical sensors; Phase detection; Photodiodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN
0-7803-9214-0
Type
conf
DOI
10.1109/SMICND.2005.1558728
Filename
1558728
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