DocumentCode :
446545
Title :
Analysis of the sensitivity of a monolithic optical phase-shift detector to geometrical parameter variations
Author :
Valentin, J. ; Arguel, P. ; Bouchard, O. ; Lozes-Dupuy, F. ; Bonnefont, S.
Author_Institution :
LAAS-CNRS, Toulouse, France
Volume :
1
fYear :
2005
fDate :
3-5 Oct. 2005
Firstpage :
129
Abstract :
Modelling of a novel monolithic optical phase-shift detector is presented. The device consists of a diffraction grating etched at the surface of a p-n photodiode on silicon. The photodiode generates a current depending on the relative phase between two incident beams collimated toward the diffraction grating. It is shown that the photocurrent contrast, given by the whole range of the phase variation, can be optimised by a precise determination of the period, depth and filling factor of the grating. Detailed analysis of the device performance for TE and TM polarization shows its high sensitivity to the above geometrical parameter variations.
Keywords :
diffraction gratings; elemental semiconductors; integrated optoelectronics; light polarisation; monolithic integrated circuits; optical sensors; photoconductivity; photodetectors; photodiodes; semiconductor device models; silicon; TE polarization; TM polarization; collimated beams; diffraction grating; etching; geometrical parameter variations; monolithic optical detector; optical phase-shift detector; p-n photodiode; phase variation; photocurrent contrast; photodiode-on-silicon; sensitivity analysis; Diffraction gratings; Etching; Geometrical optics; Optical collimators; Optical detectors; Optical diffraction; Optical sensors; Phase detection; Photodiodes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN :
0-7803-9214-0
Type :
conf
DOI :
10.1109/SMICND.2005.1558728
Filename :
1558728
Link To Document :
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