Title :
Photocapacitance relaxation in amorphous As2Se3 and As2Se3:Sn films
Author :
Vasiliev, I.A. ; Iovu, M.S. ; Mirovitskii, V.Yu. ; Colomeiko, E.P. ; Harea, D.V.
Author_Institution :
Center of Optoelectron., Chisinau, Moldova
Abstract :
Measurements are presented for the photocapacitance transient arising at contacts of the metal-amorphous As2Se3 or As2Se3:Snx (x∼1 at. %) film as response to a pulse of linearly increasing voltage. It was shown, that transient photocapacitance is determined by the deep acceptor-like states, which are quasi-continuously distributed near the Fermi-level. The observed increasing in concentration of deep states in samples with tin impurity was discussed.
Keywords :
Fermi level; amorphous semiconductors; arsenic compounds; deep levels; impurity states; photocapacitance; semiconductor thin films; tin; As2Se3 films; As2Se3:Sn; As2Se3:Sn films; Fermi-level; amorphous films; deep acceptor-like states; deep states; metal-amorphous contacts; photocapacitance relaxation; photocapacitance transient; tin impurity; Amorphous materials; Capacitance; Charge carriers; Current measurement; Electrodes; Frequency; Sputtering; Temperature; Tin; Voltage;
Conference_Titel :
Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
Print_ISBN :
0-7803-9214-0
DOI :
10.1109/SMICND.2005.1558729
