• DocumentCode
    446546
  • Title

    Photocapacitance relaxation in amorphous As2Se3 and As2Se3:Sn films

  • Author

    Vasiliev, I.A. ; Iovu, M.S. ; Mirovitskii, V.Yu. ; Colomeiko, E.P. ; Harea, D.V.

  • Author_Institution
    Center of Optoelectron., Chisinau, Moldova
  • Volume
    1
  • fYear
    2005
  • fDate
    3-5 Oct. 2005
  • Firstpage
    133
  • Abstract
    Measurements are presented for the photocapacitance transient arising at contacts of the metal-amorphous As2Se3 or As2Se3:Snx (x∼1 at. %) film as response to a pulse of linearly increasing voltage. It was shown, that transient photocapacitance is determined by the deep acceptor-like states, which are quasi-continuously distributed near the Fermi-level. The observed increasing in concentration of deep states in samples with tin impurity was discussed.
  • Keywords
    Fermi level; amorphous semiconductors; arsenic compounds; deep levels; impurity states; photocapacitance; semiconductor thin films; tin; As2Se3 films; As2Se3:Sn; As2Se3:Sn films; Fermi-level; amorphous films; deep acceptor-like states; deep states; metal-amorphous contacts; photocapacitance relaxation; photocapacitance transient; tin impurity; Amorphous materials; Capacitance; Charge carriers; Current measurement; Electrodes; Frequency; Sputtering; Temperature; Tin; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International
  • Print_ISBN
    0-7803-9214-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2005.1558729
  • Filename
    1558729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=446546