Corrugated microstructures for silicon photodetectors

Author

Dinescu, A. ; Conache, G. ; Gavrila, R.

Author_Institution

IMT, Bucharest, Romania

Volume

1

fYear

2005

fDate

3-5 Oct. 2005

Firstpage

137

Abstract

In order to decrease the dark current of a pn junction photodetector together with improving its photoelectric response, thinning of a silicon wafer can be achieved without losing its mechanical resistance by a special etching process performed on both sides of the wafer. Corrugated microstructures were obtained by photolithographic and anisotropic etching procedures on silicon wafers meant to be used in photodetecting devices and optical measurements were performed.

Keywords

elemental semiconductors; etching; integrated optics; integrated optoelectronics; p-n junctions; photodetectors; photoelectricity; photolithography; silicon; Si; anisotropic etching; corrugated microstructures; dark current; mechanical resistance; optical measurements; photodetecting devices; photoelectric response; photolithographic etching; pn junction photodetector; silicon photodetectors; silicon wafer thinning; Anisotropic magnetoresistance; Dark current; Electrical resistance measurement; Etching; Geometrical optics; Microstructure; Optical devices; Performance evaluation; Photodetectors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2005. CAS 2005 Proceedings. 2005 International

Print_ISBN

0-7803-9214-0

Type

conf

DOI

10.1109/SMICND.2005.1558730

Filename

1558730