DocumentCode
446689
Title
Highly linear G/sub m/ element for high-frequency applications
Author
Karvonen, Sami ; Riley, Thomas ; Kostamovaara, Juha
Author_Institution
Dept. of Electr. Eng. & Infotech Oulu, Oulu Univ.
Volume
1
fYear
2003
fDate
30-30 Dec. 2003
Firstpage
145
Abstract
A constant-Gm highly linear transconductance (Gm ) cell based on the use of a linear passive resistor and feedback technique is presented. The high-frequency linearity properties of the circuit are investigated using the Volterra analysis method. Simulation results of a linearity-optimized Gm element in 0.35 mum CMOS are presented showing a THD of -75.7 dB at 50 MHz for a 1.8 Vp-p input signal
Keywords
CMOS analogue integrated circuits; VHF circuits; Volterra series; circuit feedback; continuous time filters; harmonic distortion; 0.35 micron; 1.8 V; 50 MHz; Volterra analysis; circuit simulation; feedback technique; high frequency applications; highly linear transconductance cell; linear passive resistor; total harmonic distortion; Character generation; Feedback amplifiers; Feedback circuits; Impedance; Linearity; MOSFETs; Negative feedback loops; Transconductance; Transconductors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Conference_Location
Cairo
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562239
Filename
1562239
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