A bidirectional DC model of hot-carrier-induced nMOSFET degradation

Author

Kasemsuwan, Varakom ; Chaisirithavornkul, W.

Author_Institution

Dept. of Electron., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

1

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

265

Abstract

A bidirectional DC model of hot-carrier-induced nMOSFET degradation using exponential interface state profile is proposed. A single physically based exponential expression to describe localized distribution of the interface states along the channel is employed. The saturation voltage as a function of a position along the channel due to localized interface states is taken into account. Several short-channel effects including vertical and lateral field degradations, saturation velocity, parasitic source-drain resistances, and channel length modulation are included. The predictions of the model agree well with the experimental data.

Keywords

MOSFET; hot carriers; interface states; semiconductor device models; bidirectional DC model; channel length modulation; exponential interface state profile; hot-carrier-induced nMOSFET degradation; lateral field degradation; localized interface states; parasitic source-drain resistances; saturation velocity; saturation voltage; short-channel effects; vertical degradation; Current-voltage characteristics; Degradation; Electron traps; Hot carriers; Interface states; MOS devices; MOSFET circuits; Predictive models; Shape; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562269

Filename

1562269