Title :
A bidirectional DC model of hot-carrier-induced nMOSFET degradation
Author :
Kasemsuwan, Varakom ; Chaisirithavornkul, W.
Author_Institution :
Dept. of Electron., King Mongkut´´s Inst. of Technol., Bangkok, Thailand
Abstract :
A bidirectional DC model of hot-carrier-induced nMOSFET degradation using exponential interface state profile is proposed. A single physically based exponential expression to describe localized distribution of the interface states along the channel is employed. The saturation voltage as a function of a position along the channel due to localized interface states is taken into account. Several short-channel effects including vertical and lateral field degradations, saturation velocity, parasitic source-drain resistances, and channel length modulation are included. The predictions of the model agree well with the experimental data.
Keywords :
MOSFET; hot carriers; interface states; semiconductor device models; bidirectional DC model; channel length modulation; exponential interface state profile; hot-carrier-induced nMOSFET degradation; lateral field degradation; localized interface states; parasitic source-drain resistances; saturation velocity; saturation voltage; short-channel effects; vertical degradation; Current-voltage characteristics; Degradation; Electron traps; Hot carriers; Interface states; MOS devices; MOSFET circuits; Predictive models; Shape; Voltage;
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Print_ISBN :
0-7803-8294-3
DOI :
10.1109/MWSCAS.2003.1562269
