DocumentCode
446704
Title
High-sensitivity switched-current sensing circuit for magnetic tunnel junction MRAM
Author
Au, Edward K S ; Ki, Wing-Hung ; Mow, Wai Ho ; Hung, Silas T. ; Wong, Catherine Y.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
Volume
1
fYear
2003
fDate
30-30 Dec. 2003
Firstpage
269
Abstract
A high-sensitivity switched-current sensing circuit for reading data non-destructively from 1T-1MTJ magneto-resistive random access memory (MRAM) is presented. Compared to the existing sensing circuits at a power supply of 3.0V, simulation results showed that the read access time and the power consumption are about 3 times faster and smaller
Keywords
magnetic storage; magnetic tunnelling; random-access storage; switched current circuits; 3.0 V; magnetic tunnel junction MRAM; magneto-resistive random access memory; switched-current sensing circuit; Clocks; Energy consumption; MOSFETs; Magnetic circuits; Magnetic materials; Magnetic switching; Magnetic tunneling; Operational amplifiers; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Conference_Location
Cairo
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562270
Filename
1562270
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