Title :
High-sensitivity switched-current sensing circuit for magnetic tunnel junction MRAM
Author :
Au, Edward K S ; Ki, Wing-Hung ; Mow, Wai Ho ; Hung, Silas T. ; Wong, Catherine Y.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon
Abstract :
A high-sensitivity switched-current sensing circuit for reading data non-destructively from 1T-1MTJ magneto-resistive random access memory (MRAM) is presented. Compared to the existing sensing circuits at a power supply of 3.0V, simulation results showed that the read access time and the power consumption are about 3 times faster and smaller
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; switched current circuits; 3.0 V; magnetic tunnel junction MRAM; magneto-resistive random access memory; switched-current sensing circuit; Clocks; Energy consumption; MOSFETs; Magnetic circuits; Magnetic materials; Magnetic switching; Magnetic tunneling; Operational amplifiers; Switching circuits; Voltage;
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Conference_Location :
Cairo
Print_ISBN :
0-7803-8294-3
DOI :
10.1109/MWSCAS.2003.1562270
