Title :
Impact of new transistor scaling methods on SOI SRAM cell stability
Author :
Burbach, G. ; Feudel, T. ; Horstmann, M. ; Greenlaw, D. ; Seltmann, R. ; Craig, M. ; Krishnan, S. ; Leary, M. ; Kepler, N. ; Raab, M.
Author_Institution :
Adv. Micro Devices, Dresden, Germany
Abstract :
The size of the embedded SRAM is steadily increasing in high-end microprocessors like Athlon64™ and Opteron™. So the demand for small cell footprints and improved stability has become more challenging. We describe how AMD has recognized and addressed the competing aspects of technology scaling and improved stability in the 90nm technology.
Keywords :
SRAM chips; circuit stability; embedded systems; microprocessor chips; silicon-on-insulator; 90 nm; SOI SRAM cell stability; cell footprints; embedded SRAM; high-end microprocessors; transistor scaling methods; Capacitive sensors; Collaboration; Design engineering; Heating; Microprocessors; Product design; Proximity effect; Random access memory; Stability; Transistors;
Conference_Titel :
SOI Conference, 2005. Proceedings. 2005 IEEE International
Print_ISBN :
0-7803-9212-4
DOI :
10.1109/SOI.2005.1563592
