Millimeter wave HEMTs of R&PC ≪Istok≫

Author

Vasil´ev, V.I. ; Zemliakov, V.E. ; Maleev, N.A. ; Zhukov, A.E. ; Vasil´ev, A.P. ; Mikhrin, V.S. ; Ustinov, V.M.

Author_Institution

Federal State Unitary Corp. R&PC, Moscow, Russia

Volume

1

fYear

2005

fDate

12-16 Oct. 2005

Firstpage

171

Abstract

First results of heterostructure field effect transistors with 120, 300 and 600 μm gate widths developed in R&PC ≪Istok≫ are presented. Pseudo-morphic high electron mobility epitaxial structure were grown by molecular beam epitaxy. Typical channel carrier concentration 2.0 10¹² cm^-2 with mobilities > 6000 cm²/V-s were obtained at 300 K. The transistors were fabricated with 0,15-0,25 μm T-gate. The devises demonstrates minimum noise figure less than 2 dB, associated gain more than 5 dB at 40 GHz, and output power density about 900 mW/mm at centimeter wave-length band with power added efficiency more then 30%.

Keywords

high electron mobility transistors; millimetre wave field effect transistors; 120 mum; 300 K; 300 mum; 40 GHz; 600 mum; R&PC; heterostructure field effect transistors; millimeter wave HEMT; molecular beam epitaxy; pseudo-morphic high electron mobility epitaxial structure; Fabrication; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium compounds; MESFETs; Noise figure; PHEMTs; Resists; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave & Telecommunication Technology, 2005 15th International Crimean Conference

Print_ISBN

966-7968-80-4

Type

conf

DOI

10.1109/CRMICO.2005.1564856

Filename

1564856