Infrared radiation induced spin photocurrents in GaN low-dimensional structures

Author

Weber, W. ; Ganichev, S.D. ; Bel´kov, V.V. ; Golub, L.E. ; Prettl, W. ; Kvon, Z.D. ; Cho, Hyun-Ick ; Lee, Jung-Hee

Author_Institution

Fac. of Phys., Regensburg Univ., Germany

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

66

Abstract

Infrared radiation spin photocurrents have been observed in GaN quantum well structures. Observed currents change sign upon reversing of radiation helicity demonstrating an existence of Rashba/Dresselhaus spin splitting of the conduction band in this new type of materials. Approvement of spin degeneracy removal in GaN structures allows to consider this material as a candidate for semiconductor spintronic.

Keywords

III-V semiconductors; conduction bands; gallium compounds; magnetoelectronics; photoconductivity; radiation hardening (electronics); semiconductor quantum wells; wide band gap semiconductors; GaN; GaN quantum well structures; Rashba/Dresselhaus spin splitting; conduction band; infrared radiation spin photocurrents; low-dimensional structures; semiconductor spintronic; spin degeneracy removal; Conducting materials; Gallium nitride; Laser transitions; Magnetoelectronics; Optical polarization; Optical pumping; Photoconductivity; Photovoltaic effects; Physics; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572409

Filename

1572409