Investigation of drift waves in semiconducting multilayered structure

Author

Bulgakov, A.A. ; Shramkova, O.V.

Author_Institution

Dept. of Solid-State Radiophys., Nat. Acad. of Sci. of Ukraine, Kharkov, Ukraine

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

121

Abstract

The drift waves in infinite layered periodic structures placed into an external electric field are considered in the work. We investigate the structure composed of electron and hole semiconductors. It is assumed that the thickness of layers less than length of electromagnetic wave. It is shown that drift waves in such structure can propagate on the angle to the direction of current. The properties of waves are determined by the direction of propagation and thicknesses of layers. The instability increments for drift waves are investigated.

Keywords

drift instability; periodic structures; plasma drift waves; plasma electromagnetic wave propagation; semiconductor plasma; drift waves; electromagnetic wave; electron semiconductor; external electric field; hole semiconductor; infinite layered periodic structure; layer thickness; propagation direction; semiconducting multilayered structure; Anisotropic magnetoresistance; Charge carrier processes; Electromagnetic propagation; Electromagnetic scattering; Frequency; Periodic structures; Plasma applications; Plasma waves; Semiconductivity; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572437

Filename

1572437