DocumentCode
447767
Title
Mutual injection locking between sub-THz oscillating resonant tunneling diodes
Author
Suzuki, S. ; Orihashi, N. ; Asada, M.
Author_Institution
Interdisciplinary Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
Volume
1
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
150
Abstract
Mutual injection locking was observed for sub-THz oscillators consisting of GaInAs/AlAs resonant tunneling diodes integrated with slot antennas. Two oscillators with the individual frequencies of 340 GHz and 324 GHz on the same wafer were driven simultaneously. Oscillation at a single line of 330 GHz was obtained with summed output power.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; injection locked oscillators; resonant tunnelling diodes; slot antennas; submillimetre wave diodes; 324 GHz; 330 GHz; 340 GHz; GaInAs-AlAs; mutual injection locking; slot antennas; sub-THz oscillating resonant tunneling diodes; sub-THz oscillators; Electrical resistance measurement; Frequency; Indium phosphide; Injection-locked oscillators; Power generation; Quantum cascade lasers; Resonant tunneling devices; Semiconductor diodes; Slot antennas; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572452
Filename
1572452
Link To Document