Effects of carrier degeneracy and conduction band nonparabolicity on the simulation of HgCdTe photovoltaic devices

Author

Quan, Z.J. ; Chen, G.B. ; Sun, L.Z. ; Ye, Z.H. ; Li, Z.F. ; Lu, W.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

158

Abstract

By using the analytic model of the MCT device simulation, R_d-V curve comparisons are made with the carrier density approximations by considering (1) both carrier degeneracy and conduction band nonparabolicity, (2) only carrier degeneracy, and (3) only conduction band nonparabolicity. The effects of the omission of carrier degeneracy and conduction band nonparabolicity on each of the four types of dark current mechanisms are evaluated, which is found to lead to an enormous deviation in the simulation of MCT devices, especially for LWIR devices with heavy doping.

Keywords

II-VI semiconductors; cadmium compounds; carrier density; conduction bands; dark conductivity; mercury compounds; photoconducting devices; photoconductivity; photovoltaic effects; semiconductor device models; HgCdTe; LWIR devices; MCT device simulation; carrier degeneracy; carrier density approximation; conduction band nonparabolicity; dark current mechanism; photovoltaic devices; Analytical models; Charge carrier density; Conducting materials; Dark current; Laboratories; Photovoltaic systems; Physics; Solar power generation; Solid modeling; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572456

Filename

1572456