Title :
Negative photoconductivity due to coherent trapping of electrons in n-GaAs
Author :
Klaassen, T.O. ; Orlova, E.E. ; Hovenier, J.N. ; Ghianni, F.
Author_Institution :
Kavli Inst. of Nanosci., Delft Univ. of Technol., Netherlands
Abstract :
A planar antenna on epitaxial n-GaAs, illuminated by an external THz source, has been used to create intense THz fields to study donor and cyclotron resonance transitions in a magnetic field at low temperature. When the THz field is resonant with such a transition, the resulting extremely strong coupling between the two levels leads to coherent population trapping by single frequency excitation. This effect is visible through the observed negative photoconductivity.
Keywords :
III-V semiconductors; cyclotron resonance; electron traps; gallium arsenide; photoconductivity; submillimetre wave spectra; GaAs; THz fields; coherent population trapping; cyclotron resonance transitions; electron coherent trapping; external THz source; magnetic field; negative photoconductivity; planar antenna; single frequency excitation; Chromium; Cyclotrons; Electron optics; Electron traps; Frequency; Magnetic fields; Magnetic resonance; Optical pumping; Photoconductivity; Spectroscopy;
Conference_Titel :
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN :
0-7803-9348-1
DOI :
10.1109/ICIMW.2005.1572468
