Negative photoconductivity due to coherent trapping of electrons in n-GaAs

Author

Klaassen, T.O. ; Orlova, E.E. ; Hovenier, J.N. ; Ghianni, F.

Author_Institution

Kavli Inst. of Nanosci., Delft Univ. of Technol., Netherlands

Volume

1

fYear

2005

fDate

19-23 Sept. 2005

Firstpage

182

Abstract

A planar antenna on epitaxial n-GaAs, illuminated by an external THz source, has been used to create intense THz fields to study donor and cyclotron resonance transitions in a magnetic field at low temperature. When the THz field is resonant with such a transition, the resulting extremely strong coupling between the two levels leads to coherent population trapping by single frequency excitation. This effect is visible through the observed negative photoconductivity.

Keywords

III-V semiconductors; cyclotron resonance; electron traps; gallium arsenide; photoconductivity; submillimetre wave spectra; GaAs; THz fields; coherent population trapping; cyclotron resonance transitions; electron coherent trapping; external THz source; magnetic field; negative photoconductivity; planar antenna; single frequency excitation; Chromium; Cyclotrons; Electron optics; Electron traps; Frequency; Magnetic fields; Magnetic resonance; Optical pumping; Photoconductivity; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on

Print_ISBN

0-7803-9348-1

Type

conf

DOI

10.1109/ICIMW.2005.1572468

Filename

1572468