DocumentCode
447793
Title
Loss properties of SiC at millimeter wavelengths
Author
Dutta, J.M. ; Yu, Guofen ; Jones, C.R.
Author_Institution
Dept. of Phys., North Carolina Central Univ., Durham, NC, USA
Volume
1
fYear
2005
fDate
19-23 Sept. 2005
Firstpage
213
Abstract
Data are presented on room temperature dielectric properties of SiC wafers of various grades at millimeter wavelengths to explore their potential as an alternate material for gyrotron window applications. In addition, measurements are being performed over a range of frequencies and temperatures to understand the loss mechanism and results will be reported.
Keywords
dielectric loss measurement; gyrotrons; millimetre wave measurement; millimetre wave spectra; silicon compounds; wide band gap semiconductors; SiC; SiC wafers; gyrotron window applications; loss properties; millimeter wavelengths; room temperature dielectric properties; Dielectric loss measurement; Dielectric materials; Dielectric measurements; Frequency measurement; Gyrotrons; Loss measurement; Millimeter wave measurements; Silicon carbide; Temperature; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
Print_ISBN
0-7803-9348-1
Type
conf
DOI
10.1109/ICIMW.2005.1572484
Filename
1572484
Link To Document