• DocumentCode
    447815
  • Title

    Observation of below-bandgap excited terahertz emission in the action spectra of GaAs/AlGaAs multiple quantum wells

  • Author

    Estacio, E. ; Quema, A. ; Diwa, G. ; Murakami, H. ; Ono, S. ; Sarukura, N. ; Somintac, A. ; Salvador, A.

  • Author_Institution
    Inst. for Molecular Sci., Okazaki, Japan
  • Volume
    1
  • fYear
    2005
  • fDate
    19-23 Sept. 2005
  • Firstpage
    273
  • Abstract
    We present terahertz emission of optically pumped GaAs/AlGaAs multiple quantum wells (MQWs). The action spectra exhibit emission even at excitation energies below the bandgap. Results show that the radiation could not have come from the bulk layers and is inferred to be due to shallow states under the band edge.
  • Keywords
    III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; semiconductor quantum wells; submillimetre waves; GaAs-AlGaAs; action spectra; bandgap excitation; multiple quantum well; terahertz emission; Frequency; Gallium arsenide; Laser excitation; Laser mode locking; Magnetic field measurement; Photonic band gap; Quantum well devices; Spectroscopy; Stimulated emission; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, 2005. IRMMW-THz 2005. The Joint 30th International Conference on
  • Print_ISBN
    0-7803-9348-1
  • Type

    conf

  • DOI
    10.1109/ICIMW.2005.1572514
  • Filename
    1572514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447815