• DocumentCode
    447859
  • Title

    Differential gain and non-linear gain compression of GaInNAsSb/GaAs lasers at 1.5μm

  • Author

    Goddard, L.L. ; Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Bae, H.P. ; Harris, J.S., Jr.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    86
  • Abstract
    We present temperature dependent measurements of differential gain, dg/dn, and nonlinear gain compression, ε. At 20°C, dg/dn=92×10-16cm2 and ε=1.4×10-16cm3. The 57K characteristic temperature of dg/dn limited T0. Large ε caused spectral broadening at high power.
  • Keywords
    III-V semiconductors; gain measurement; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; spectral line broadening; temperature measurement; 1.5 micron; 20 C; 57 K; GaInNAsSb-GaAs; GaInNAsSb/GaAs lasers; differential gain; nonlinear gain compression; spectral broadening; temperature measurement; Damping; Fiber lasers; Fiber nonlinear optics; Gallium arsenide; Power lasers; Resonance; Resonant frequency; Solid lasers; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201685
  • Filename
    1572751