• DocumentCode
    447862
  • Title

    1.3 μm GaInNAs bandgap difference confinement (BDC) optical amplifier

  • Author

    Hashimoto, Jun-ichi ; Koyama, Kenji ; Katsuyama, Tsukuru ; Tsuji, Yukihiro ; Fujii, Kousuke ; Yamazaki, Koichiro ; Ishida, Akira

  • Author_Institution
    OITDA, Japan
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    95
  • Abstract
    A GaInNAs BDC-SOA utilizing bandgap difference for current confinement was developed. Due to strong current and optical confinements in the lateral direction, gain and fiber coupling efficiency were significantly increased compared with a conventional GaInNAs-SOA.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical fibre communication; semiconductor optical amplifiers; 1.3 micron; GaInNAs; bandgap difference confinement; current confinement; fiber coupling efficiency; gain efficiency; optical confinement; semiconductor optical amplifier; Annealing; Bandwidth; Coatings; Lasers and electrooptics; Optical amplifiers; Optical films; Photonic band gap; Semiconductor optical amplifiers; Stimulated emission; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201688
  • Filename
    1572754