• DocumentCode
    447865
  • Title

    High-speed electrical modulator in high-index-contrast (HIC) Si-waveguides

  • Author

    Gan, Fuwan ; Kärtner, Franz X.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Massachusetts Univ., Cambridge, MA, USA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    104
  • Abstract
    A CMOS-compatible Mach-Zehnder modulator based on strongly forward biased PIN-diodes is proposed, resulting in small signal modulation bandwidths beyond 20 GHz, a figure of merit of VπL=0.5 V·cm and an insertion loss of about 4 dB.
  • Keywords
    elemental semiconductors; optical modulation; optical waveguides; p-i-n diodes; silicon; CMOS-compatible Mach-Zehnder modulator; Si; forward biased PIN-diodes; high-index-contrast Si-waveguides; high-speed electrical modulator; insertion loss; small signal modulation bandwidths; Biomedical optical imaging; High speed optical techniques; Optical losses; Optical modulation; Optical saturation; Optical waveguides; Phase modulation; Silicon; Slabs; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201691
  • Filename
    1572757
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447865