• DocumentCode
    447867
  • Title

    Fast and efficient light intensity modulation in SOI with gate-all-around transistor phase modulator

  • Author

    Dainesi, P. ; Moselund, K.E. ; Thevenaz, L. ; Ionescu, A.M.

  • Author_Institution
    Nanophotonics & Metrol. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
  • Volume
    1
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    110
  • Abstract
    We report fast modulation (>30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a gate-all-around transistor as active element. Modulation depth >90% can be obtained in 12.5 μm long devices.
  • Keywords
    integrated optics; mirrors; optical modulation; phase modulation; silicon-on-insulator; 12.5 micron; SOI resonant cavity; Si-SiO2; gate-all-around transistor phase modulator; integrated Bragg mirrors; light intensity modulation; modulation depth; Intensity modulation; MOSFETs; Mirrors; Optical devices; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Phase modulation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201693
  • Filename
    1572759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447867