DocumentCode
447877
Title
Photoelectrochemical oxidation enhances optical output power in GaN-based light emitting diodes
Author
Lin, Chia-Feng ; Yang, Zhong-Jie ; Zheng, Jing-Hui
Author_Institution
Dept. of Mater. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
156
Abstract
Using the photoelectrochemical (PEC) oxidation process, the output power was increased by about 40%, caused by a reduced index reflectance from the GaN material to the outside air, and an increased roughness in the oxidized sidewalls. In addition, the enhanced output power was decreased when the PEC oxidation time was increased. These PEC treated InGaN/GaN MQW LEDs are suitable for all Nitride-based LED lighting applications.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; light sources; oxidation; photoelectrochemistry; quantum well devices; GaN-based light emitting diode; InGaN-GaN; LED; index reflectance; optical output power; photoelectrochemical oxidation; Gallium nitride; Light emitting diodes; MOCVD; Mercury (metals); Oxidation; Power generation; Quantum well devices; Stimulated emission; Surface morphology; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Print_ISBN
1-55752-795-4
Type
conf
DOI
10.1109/CLEO.2005.201709
Filename
1572775
Link To Document