DocumentCode :
447906
Title :
InAs/AlGaSb quantum cascade lasers
Author :
Ohtani, K. ; Ohno, H.
Author_Institution :
Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai
Volume :
1
fYear :
2005
fDate :
27-27 May 2005
Firstpage :
244
Lastpage :
247
Abstract :
We report our recent experimental results on mid-infrared InAs/AlGaSb quantum cascade lasers. InAs/AlGaSb superlattice structures that provide large oscillator strength are used as active layers. Observed minimum threshold current density is 0.42kA/cm2 and the maximum operation temperature is 270K
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; semiconductor superlattices; 270 K; InAs-AlGaSb; InAs/AlGaSb; active layers; oscillator strength; quantum cascade lasers; superlattice structures; threshold current density; Conducting materials; Optical materials; Optical scattering; Optical superlattices; Optical waveguides; Oscillators; Quantum cascade lasers; Semiconductor materials; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2005. (CLEO). Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
1-55752-795-4
Type :
conf
DOI :
10.1109/CLEO.2005.201740
Filename :
1572806
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=447906
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