• DocumentCode
    447906
  • Title

    InAs/AlGaSb quantum cascade lasers

  • Author

    Ohtani, K. ; Ohno, H.

  • Author_Institution
    Lab. for Nanoelectron. & Spintronics, Tohoku Univ., Sendai
  • Volume
    1
  • fYear
    2005
  • fDate
    27-27 May 2005
  • Firstpage
    244
  • Lastpage
    247
  • Abstract
    We report our recent experimental results on mid-infrared InAs/AlGaSb quantum cascade lasers. InAs/AlGaSb superlattice structures that provide large oscillator strength are used as active layers. Observed minimum threshold current density is 0.42kA/cm2 and the maximum operation temperature is 270K
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; semiconductor superlattices; 270 K; InAs-AlGaSb; InAs/AlGaSb; active layers; oscillator strength; quantum cascade lasers; superlattice structures; threshold current density; Conducting materials; Optical materials; Optical scattering; Optical superlattices; Optical waveguides; Oscillators; Quantum cascade lasers; Semiconductor materials; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2005. (CLEO). Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    1-55752-795-4
  • Type

    conf

  • DOI
    10.1109/CLEO.2005.201740
  • Filename
    1572806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=447906